Dmos Fet

Type Designator: BS170

Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. N-Channel Enhancement-Mode Vertical DMOS FET Absolute Maximum Ratings Parameter Value. New 10 pcs Zetex ZVP3310A. P-Channel MOSFET DMOS 100V P-CH E-LINE FET TO-92.

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.83 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V

Maximum Drain Current |Id|: 0.5 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 5 Ohm

Package: TO92

BS170 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BS170 Datasheet (PDF)

0.1. bs170rev1x.pdf Size:77K _motorola

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BS170/DTMOS FET SwitchingN Channel EnhancementBS1701 DRAIN2GATE3 SOURCEMAXIMUM RATINGS12Rating Symbol Value

0.2. bs170 cnv 2.pdf Size:49K _philips

Leelenstein chess. DISCRETE SEMICONDUCTORSDATA SHEETBS170N-channel vertical D-MOStransistorApril 1995Product specificationFile under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationN-channel vertical D-MOS transistor BS170DESCRIPTION QUICK REFERENCE DATAN-channel enhancement modeDrain-source voltage VDS max. 60 Vvertical D-MOS transistor in TO-92Gate-source v

0.3. bs170.pdf Size:652K _fairchild_semi

April 1995 BS170 / MMBF170N-Channel Enhancement Mode Field Effect Transistor General Description FeaturesThese N-Channel enhancement mode field effect High density cell design for low RDS(ON).transistors are produced using Fairchild's proprietary, highVoltage controlled small signal switch.cell density, DMOS technology. These products have beendesigned to minimize on-state resi

0.4. bs170 d26z bs170 d27z bs170 d74z bs170 d75z bs170 l34z bs170 mmbf170.pdf Size:1298K _fairchild_semi

March 2010BS170 / MMBF170N-Channel Enhancement Mode Field Effect Transistor General Description FeaturesThese N-Channel enhancement mode field effect High density cell design for low RDS(ON).transistors are produced using Fairchild's proprietary, high Voltage controlled small signal switch.cell density, DMOS technology. These products have beendesigned to minimize on-s

0.5. 2n7000kl bs170kl.pdf Size:93K _vishay

2N7000KL/BS170KLVishay SiliconixN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) () VGS(th) (V) ID (A)Pb-free ESD Protected: 2000 VAvailable2 at VGS = 10 V0.4760 1.0 to 2.5 RoHS*APPLICATIONSCOMPLIANT4 at VGS = 4.5 V0.33 Direct Logic-Level Interface: TTL/CMOS Solid-State Relays Drivers: Relays,

0.6. 2n7000 2n7002 vq1000j-p bs170.pdf Size:58K _vishay

2N7000/2N7002, VQ1000J/P, BS170Vishay SiliconixN-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYPart Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A)5 @ VGS = 10 V 0.8 to 3 0.22N70002N7002 7.5 @ VGS = 10 V 1 to 2.5 0.11560VQ1000J 5.5 @ VGS = 10 V 0.8 to 2.5 0.225VQ1000P 5.5 @ VGS = 10 V 0.8 to 2.5 0.225BS170 5 @ VGS = 10 V 0.8 to 3 0.5FEATURES BENEFITS APPLICATIONSD

0.7. bs170g bs170rl1g bs170rlra bs170rlrag bs170rlrmg bs170rlrp bs170rlrpg bs170zl1g.pdf Size:88K _onsemi

BS170GSmall Signal MOSFET500 mA, 60 VoltsN-Channel TO-92 (TO-226)Featureshttp://onsemi.com This is a Pb-Free Device*500 mA, 60 VoltsMAXIMUM RATINGSRDS(on) = 5.0 WRating Symbol Value UnitDrain -Source Voltage VDS 60 VdcN-ChannelGate-Source VoltageD- Continuous VGS 20 Vdc- Non-repetitive (tp 50 ms) VGSM 40 VpkDrain Current (Note) ID 0.5 AdcGTotal

0.8. bs170g.pdf Size:92K _onsemi

0.9. bs170p.pdf Size:15K _no

N-CHANNEL ENHANCEMENTBS170PMODE VERTICAL DMOS FETISSUE 2 SEPT 93FEATURES* 60 Volt VDS* RDS(on)=5D G SREFER TO ZVN3306A FOR GRAPHSE-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 60 VContinuous Drain Current at Tamb =25C ID 270 mAPulsed Drain Current IDM 3AGate-Source Voltage VGS 20 VPower Dissipati

0.10. bs170f.pdf Size:67K _no

ST3-ANLNACMNO2NCHNEEHNEETB10S7FM EETADOFTODVRILMSECIU3JNAY96SSE-AUR19FAUEETRS*6VlVS0otDS*RSN=5D(O)DGPRMRI DTIVATAKGEAN LMST3O2ASLTMX AIBOUE AIU NSMMRTG.PRMTR SMO VLE UIAAEE YBL AU NTDa-or Vlg VS 6 Vrn eoae 0iSuc tDCnnosrnurttab2 I 05 motuu Da CrnaTm=5 . Ai i e C 1DPldriCrn I 3 Aue Da es nurtDMGtS

Install darwin streaming server ubuntu. 0.11. hbs170.pdf Size:403K _shantou-huashan

Shantou Huashan Electronic Devices Co.,Ltd. HBS170 N-Channel Enhancement Mode Field Effect Transistor General Description These products have been designed to minimize on-state resistance TO-92 While provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500mA DC. These products are particularly suited for low voltage,

0.12. bs170fta bs170ftc.pdf Size:17K _zetex

SOT23 N-CHANNEL ENHANCEMENTBS170FMODE VERTICAL DMOS FETISSUE 3 - JANUARY 1996FEATURES* 60Volt VDSS* RDS(ON) = 5DGPARTMARKING DETAIL MVSOT23ABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 60 VContinuous Drain Current at Tamb=25C ID 0.15 mAPulsed Drain Current IDM 3AGate Source Voltage VGS 20 VPower Dissipation at Tamb=2

0.13. bs170pstoa bs170pstob bs170pstz.pdf Size:15K _zetex

Datasheet: BFR30, BFR31, BFR84, BFS28R, BFT46, BS107P, BS107PT, BS108, 2SK2996, BS170F, BS170P, BS250F, BS250P, BS270, BSN254, BSN254A, BSP92.

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Dmos Fet

BS170 Datasheet (PDF)

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